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PD - 94020A
HEXFET(R) POWER MOSFET SURFACE MOUNT (SMD-0.5)
Product Summary
Part Number IRF5NJ540
BVDSS
IRF5NJ540 100V, N-CHANNEL
100V
RDS(on) 0.052
ID 22A*
Fifth Generation HEXFET(R) power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits.
SMD-0.5
Features:
n n n n n n n n
Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 10V, TC = 25C ID @ VGS = 10V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Package Mounting Surface Temperature Weight * Current is limited by package For footnotes refer to the last page 22* 16 88 75 0.60 20 200 16 7.5 4.1 -55 to 150 300 (for 5 s) 1.0
Units A
W
W/C
V mJ A mJ V/ns
o
C
g
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7/13/01
IRF5NJ540
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BV DSS /T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min
100 -- -- 2.0 11 -- -- -- -- -- -- -- -- -- -- -- --
Typ Max Units
-- 0.11 -- -- -- -- -- -- -- -- -- -- -- -- -- -- 4.0 -- -- 0.052 4.0 -- 25 250 100 -100 104 20 43 24 125 86 82 -- V V/C V S( ) A
Test Conditions
VGS = 0V, ID = 250A Reference to 25C, ID = 1.0mA VGS = 10V, ID = 16A VDS = VGS, ID = 250A VDS = 50V, IDS = 16A VDS = 100V ,VGS=0V VDS = 80V, VGS = 0V, TJ =125C VGS = 20V VGS = -20V VGS =10V, ID = 16A VDS = 80V VDD = 50V, ID = 16A, VGS =10V, RG = 7.5
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
nA nC
ns
nH
Measured from the center of drain pad to center of source pad VGS = 0V, VDS = 25V f = 1.0MHz
Ciss C oss C rss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
-- -- --
1487 353 182
-- -- --
pF
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- 22* 88 1.3 240 1.67
Test Conditions
A
V nS C
Tj = 25C, IS = 16A, VGS = 0V Tj = 25C, IF = 16A, di/dt 100A/s VDD 50V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
* Current is limited by package
Thermal Resistance
Parameter
RthJC Junction-to-Case
Min Typ Max Units
-- -- 1.67
C/W
Test Conditions
Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page
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IRF5NJ540
100
I D , Drain-to-Source Current (A)
10
I D , Drain-to-Source Current (A)
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
100
10
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
4.5V
4.5V
1
1
0.1 0.1
20s PULSE WIDTH T = 25 C
J 1 10 100
0.1 0.1
20s PULSE WIDTH T = 150 C
J 1 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.5
I D , Drain-to-Source Current (A)
TJ = 25 C
R DS(on) , Drain-to-Source On Resistance (Normalized)
TJ = 150 C
ID = 22A
2.0
1.5
10
1.0
0.5
1 4.0
15
V DS = 25V 20s PULSE WIDTH 8.0 9.0 5.0 6.0 7.0 10.0
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRF5NJ540
3000
2500
VGS , Gate-to-Source Voltage (V)
VGS Ciss Crss Coss = = = = 0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd
20
ID = 16A
16
VDS = 80V VDS = 50V VDS = 20V
C, Capacitance (pF)
2000
Ciss
1500
12
8
1000
C oss
500
C rss
4
0 1 10 100
0 0 20 40
FOR TEST CIRCUIT SEE FIGURE 13
60 80 100 120
VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
1000
TJ = 150 C
ISD , Reverse Drain Current (A)
10
TJ = 25 C
1
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA LIMITED BY R DS(on)
100
10 Tc = 25C Tj = 150C Single Pulse 1 1 10
1ms 10ms
100 1000
0.1 0.2
V GS = 0 V
0.6 1.0 1.4 1.8
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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IRF5NJ540
30
LIMITED BY PACKAGE
25
VDS VGS RG
RD
D.U.T.
+
I D , Drain Current (A)
20
-VDD
VGS
15
Pulse Width 1 s Duty Factor 0.1 %
10
Fig 10a. Switching Time Test Circuit
VDS 90%
5
0 25 50 75 100 125 150
TC , Case Temperature ( C)
10% VGS
Fig 9. Maximum Drain Current Vs. Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
10
Thermal Response (Z thJC )
1
D = 0.50 0.20 0.10 0.05
0.1
0.02 0.01
SINGLE PULSE (THERMAL RESPONSE)
0.01 0.00001
Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.1 0.001 0.01 1
P DM t1 t2
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRF5NJ540
400
EAS , Single Pulse Avalanche Energy (mJ)
15V
300
TOP BOTTOM ID 7.2A 10A 16A
VDS
L
D R IV E R
RG
D .U .T.
IA S
+ - VD D
200
A
VGS 20V
tp
0 .01
100
Fig 12a. Unclamped Inductive Test Circuit
0 25 50 75 100 125 150
V (B R )D S S tp
Starting T , Junction Temperature( C) J
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
10V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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IRF5NJ540
Footnotes:
Repetitive Rating; Pulse width limited by
maximum junction temperature. VDD = 25 V, Starting TJ = 25C, L=1.5mH Peak IAS =16A, VGS = 10 V, RG= 25
ISD 16A, di/dt 350 A/s, Pulse width 300 s; Duty Cycle 2%
VDD 100V, TJ 150C
Case Outline and Dimensions -- SMD-0.5
PAD ASSIGNMENTS
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 07/01
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